Call for papers – Invitation to authors
Special Issue in Annalen der Physik and physica status solidi (b) Advances in Physics of Semiconductors (ICPS 2022)
15 July 2022
ICPS 2022: Advances in Physics of Semiconductors
Dear ICPS 2022 presenters,
Related to this year’s 35th International Conference on the Physics of Semiconductors and your presentations at the meeting, and following the success of the ICPS 2018 publication, we cordially invite you to contribute to a regular special issue (no conference proceedings) covering the latest advances of the field, to be published in the prestigious and established journals Annalen der Physik (AdP) and pss (b) – basic solid state physics.
To optimize the presentation and exposure of your work to the readership, the following submission options will be provided to authors:
- Annalen der Physik will publish Reviews or Research Articles by invited speakers. Manuscripts with urgent, particularly significant and novel results may also be submitted by all oral presenters.
- pss (b) will host a special issue with Research Articles contributed by oral and poster presenters
Annalen der Physik (www.ann-phys.org, Impact Factor 2021: 2.987, JCI Q1 journal) is an international, English-language, general physics journal with an outstanding tradition of excellence – the oldest active physics publication originally launched in 1799, now approaching its 225th anniversary. This is evidenced through famous works by Albert Einstein, Max Planck and other well-known physicists. Since 2012 AdP appears completely refreshed and renewed. Today, Nobel Laureates and other eminent researchers, among them Isamu Akasaki, Hiroshi Amano, François Englert, Francisco Guinea, Theodor Hänsch, Serge Haroche, Stefan Hell, Peter W. Higgs, Takaaki Kajita, Pierre Meystre, Shuji Nakamura, Thomas Seyller, Kip S. Thorne, and David Wineland publish with us. It is the right forum to present your work to a broad readership interested in applied and fundamental physics.
The physica status solidi journals are designed to reach a broad audience. It is one of the largest and well-established publication platforms in solid state, applied and device physics as well as materials science with more than 1000 articles per year – now over 60 years in business and widely accessible. pss has regular publication collaborations with important international semiconductor meetings such as CSW, ICNS and IWN.
For further information we refer to the author instructions available on the homepages www.ann-phys.org and www.pss-b.com ® Author Guidelines. Remember to mention the special issue in your cover letter and select the appropriate topical section/category ICPS 2022: Advances in Physics of Semiconductors during online submission to your journal of choice to expedite handling.
We look forward to receiving your contributions!
Igor Aharonovich and Stefan Hildebrandt
Reviews should provide an overview of a current topic in the format of a topical review of about 10–12 (max. 15) journal pages. Due to this length restriction, a complete bibliographic overview on the existing literature cannot be expected but referencing should be well-balanced. The manuscript should represent a snapshot of most recent progress, the state of research and particularly relevant aspects, with focus on the highlights and possibly open or controversially discussed questions. They are intended to inform an audience not immediately familiar with the specific topic. Original, previously unpublished results may also be included to a certain extent.
Research Articles expose original and previously unpublished work of general interest to the community. Manuscripts do not have a strict length limit (typical lengths vary from 6 to 10 journal pages). Articles must fulfil the standards and requirements of the journal. Acceptance of a contribution for presentation at the workshop does not automatically include publication in the special issue. The main criteria for consideration are:
- The importance, relevance, and novelty of the results match those expected for a regular journal paper.
- The general quality of the manuscript and the amount of information provided is appropriate for an international journal. Serial or incremental, pure self-referential and lab-report-style work is discouraged.
- Main results have not yet been published (also not in conference proceedings) and are not under consideration for publication elsewhere.
- Please make sure not to copy more than insignificant amounts of text from (even your own) previous publications. All submitted manuscripts will be processed through the iThenticate
Further benefits for authors include:
- The special issue publication is planned to be completed within 6 months from submissions.
- Papers will be published within days as Accepted Articles and typesetted within few weeks
- No page charges or publication costs for authors, free online colour
- Modern article formats (PDF, Enhanced PDF, HTML compatible also with mobile devices)
- Supporting information, e.g., additional data, figures, videos or animations can be published online
- Wide international accessibility as part of many institutional site licenses
- Open Access option compliant with national or funder mandates, supported by many countries and institutions (e.g., CAUL in Australia)
- Author suggestions for journal cover figures or frontispiece pages
- AdP and pss are indexed in Web of Science and all other major abstracting databases
- Promotion of selected content via portals, e.g., com, newsletters, press releases
See recent related publications:
Advances in Physics of Semiconductors (ICPS 2018)
Advances in Physics of Semiconductors (ICPS 2018)
eds. S. Ruffenach and M. Tchernycheva
Ann. Phys. (Berlin) 2019, 531, No. 6 (DOI 10.1002/andp.v531.6)
Phys. Status Solidi B 2019, 256, No. 6 (DOI 10.1002/pssb.v256.6)
Including the Review Article (opening plenary talk)
Bridging Two Worlds: Colloidal versus Epitaxial Quantum Dots
Bayer Ann. Phys. (Berlin) 2019, 531, 1900039 (DOI 10.1002/andp.201900039) and further Review and Feature Articles
Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN
Koller, G. Pobegen, C. Ostermaier, G. Hecke, R. Neumann, M. Holzbauer, G. Strasser, D. Pogany
Phys. Status Solidi B 2019, 256, 1800527 (DOI 10.1002/pssb.201800527)