Call for papers – Invitation to authors
Special Issue in Annalen der Physik
and physica status solidi (b)Advances in Physics of Semiconductors (ICPS 2020)
15 September 2020
ICPS 2020: Advances in Physics of Semiconductors
Dear ICPS 2020 presenters,
Related to this year’s 35th International Conference on the Physics of Semiconductors and your presentations at the meeting and following the success of the ICPS 2018 publication we cordially invite you to contribute to a regular special issue (no conference proceedings) covering the latest advances of the field, to be published in the prestigious and established journals Annalen der Physik (AdP) and pss (b) – basic solid state physics.
To optimize the presentation and exposure of your work to the readership, the following submission options will be provided to authors:
- Annalen der Physik will publish Review/Feature Articles or Original Papers by invited speakers. Rapid Research Letters with urgent, significant and novel results may also be submitted by all oral presenters.
- pss (b) will host a special issue with Original Papers contributed by oral and poster presenters
Annalen der Physik (www.ann-phys.org, Impact Factor 2019: 3.276, increased by 28% from 2018) is an international, English-language, general physics journal with an outstanding tradition of excellence – the oldest active physics publication originally launched in 1799. This is evidenced through famous works by Albert Einstein, Max Planck and other well-known physicists. Since 2012 AdP appears completely refreshed and renewed. Today, Nobel Laureates and other eminent researchers, among them Isamu Akasaki, Hiroshi Amano, François Englert, Francisco Guinea, Theodor Hänsch, Serge Haroche, Stefan Hell, Peter W. Higgs, Takaaki Kajita, Pierre Meystre, Shuji Nakamura, Thomas Seyller, Kip S. Thorne, and David Wineland publish with us. It is the right forum to present your work to a broad readership interested in applied and fundamental physics.
The physica status solidi journals are designed to reach a broad audience. It is one of the largest and well-established publication platforms in solid state, applied and device physics as well as materials science with more than 1000 articles per year – now close to 60 years in business and widely accessible. pss has regular publication collaborations with important international semiconductor meetings such as CSW, ICNS and IWN.
For further information we refer to the author instructions available on the homepages www.ann-phys.org and www.pss-b.com ® Author Guidelines. Remember to mention the special issue in your cover letter and select the appropriate topical section/category ICPS 2020: Advances in Physics of Semiconductors during online submission to your journal of choice to expedite handling.
We look forward to receiving your contributions!
Igor Aharonovich and Stefan Hildebrandt
Review Articles for AdP (typically 15-25 journal pages) provide a general overview of a particular topic by tracing the field, its importance and recent as well as earlier developments comprehensively and well balanced, based on a thorough review of the relevant literature.
Feature Articles for AdP (typically 10-12 journal pages) provide a survey on a current subject as a topical review and a snapshot of most recent progress and particularly relevant aspects with possibly open or controversially discussed questions. Previously unpublished results and a focus on the author’s own work may be included.
Rapid Research Letters for AdP must comply with the requirements of the journal (urgency, novelty, importance, immediate interest and suitable size). A typical RRL format is approximately 3000 words and 4 figures or tables (not page-filling), which usually corresponds to 4 journal pages in our two-column letter style.
Original Papers for pss (b) expose original and previously unpublished work of general interest to the community. Manuscripts do not have a strict length limit (typical lengths vary from 6 to 10 journal pages). Articles must fulfil the standards and requirements of the journal.
Acceptance of a contribution for presentation at the meeting does not automatically include publication in the special issue. The main criteria for consideration are:
- The importance, relevance, and novelty of the results match those expected for a regular journal paper.
- The general quality of the manuscript and the amount of information provided is appropriate for an international journal. Serial or incremental, pure self-referential and lab-report-style work is discouraged.
- Main results have not yet been published (also not in conference proceedings) and are not under consideration for publication elsewhere.
- Please make sure not to copy more than insignificant amounts of text from (even your own) previous publications. All submitted manuscripts will be processed through the iThenticate
Further benefits for authors include:
- The special issue publication is planned to be completed within 6 months from submissions.
- Papers will be published within days as Accepted Articles and typesetted within few weeks
- No page charges or publication costs for authors, free online colour
- Modern article formats (PDF, Enhanced PDF, HTML compatible also with mobile devices)
- Supporting information, e.g. additional data, figures, videos or animations can be published online
- Wide international accessibility as part of many institutional site licenses
- Wiley OnlineOpen option compliant with national or funder mandates, supported by many countries and institutions
- Author suggestions for journal cover figures or frontispiece pages
- AdP and pss are indexed in Web of Science and all other major abstracting databases
- Promotion of selected content via portals, e.g. com, newsletters, press releases
See recent related publications:
Advances in Physics of Semiconductors (ICPS 2018)
Including the Review Article (opening plenary talk)
Bridging Two Worlds: Colloidal versus Epitaxial Quantum Dots
Ann. Phys. (Berlin) 2019, 531, 1900039 (DOI 10.1002/andp.201900039) and further Review and Feature Articles
Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN
C.Koller, G. Pobegen, C. Ostermaier, G. Hecke, R. Neumann, M. Holzbauer, G. Strasser, D. Pogany
Phys. Status Solidi B 2019, 256, 1800527 (DOI 10.1002/pssb.201800527)